
IRF/B/S/SL4410ZPbF
2www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 58A, di/dt ≤ 610A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
RGInternal Gate Resistance ––– 0.70 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 140 ––– ––– S
QgTotal Gate Charge ––– 83 120 nC
Qgs Gate-to-Source Charge ––– 19 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 27
Qsync Total Gate Charge Sync. (Qg - Qgd)––– 56 –––
td(on) Turn-On Delay Time ––– 16 ––– ns
trRise Time ––– 52 –––
td(off) Turn-Off Delay Time ––– 43 –––
tfFall Time ––– 57 –––
Ciss Input Capacitance ––– 4820 ––– pF
Coss Output Capacitance ––– 340 –––
Crss Reverse Transfer Capacitance ––– 170 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) i––– 420 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h––– 690 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 97cA
(Body Diode)
ISM Pulsed Source Current ––– ––– 390 A
(Body Diode)d
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C VR = 85V,
––– 46 69 TJ = 125°C IF = 58A
Qrr Reverse Recovery Charge ––– 53 80 nC TJ = 25°C di
dt = 100A
µs
––– 82 120 TJ = 125°C
IRRM Reverse Recovery Current ––– 2.5 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 58A
RG =2.7Ω
VGS = 10V g
VDD = 65V
ID = 58A, VDS =0V, VGS = 10V g
TJ = 25°C, IS = 58A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 58A g
VDS = VGS, ID = 150µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 80V i, See Fig.11
VGS = 0V, VDS = 0V to 80V h
Conditions
VDS = 10V, ID = 58A
ID = 58A
VGS = 20V
VGS = -20V